MC100EP56 ON Semiconductor, MC100EP56 Datasheet - Page 3

• Manufacturer Part Number: MC100EP56
• Description: 3.3V / 5VECL Dual Differential 2:1 Multiplexer
• Manufacturer: ON Semiconductor

2. Maximum Ratings are those values beyond which device damage may occur.
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
3. Input and output parameters vary 1:1 with V
4. All loading with 50 W to V
5. V
10EP DC CHARACTERISTICS, PECL
MAXIMUM RATINGS
V
V
V
V
V
I
I
TA
T
q
q
q
q
T
Symbol
I
V
V
V
V
V
I
I
Symbol
out
BB
EE
IH
IL
stg
sol
BB
JA
JC
JA
JC
CC
EE
I
I
OH
OL
IH
IL
IHCMR
input signal.
IHCMR
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 4)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode
Range (Differential) (Note 5)
Input HIGH Current
Input LOW Current
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
PECL Mode In ut Voltage
NECL Mode Input Voltage
Output Current
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
BB
Sink/Source
Characteristic
(Note 2)
CC
Parameter
−2.0 volts.
EE
, V
IHCMR
max varies 1:1 with V
V
CC
CC
= 3.3 V, V
. V
MC10EP56, MC100EP56
EE
can vary +0.3 V to −2.2 V.
2165
1365
2090
1365
1790
Min
2.0
0.5
50
http://onsemi.com
EE
V
V
V
V
V
Continuous
Surge
0 LFPM
500 LFPM
std bd
0 LFPM
500 LFPM
std bd
<2 to 3 sec @ 248 C
EE
CC
EE
EE
CC
= 0 V (Note 3)
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
−40 C
2290
1490
1890
0 V
Typ
. The V
61
3
IHCMR
2415
1615
2415
1690
1990
Max
150
3.3
75
range is referenced to the most positive side of the differential
2230
1430
2155
1460
1855
V
V
V
20 TSSOP
20 TSSOP
20 TSSOP
20 SOIC
20 SOIC
20 SOIC
Min
2.0
0.5
50
I
I
I
 V
 V
 V
Condition 2
CC
CC
EE
25 C
2355
1555
1955
Typ
63
2480
1680
2480
1755
2055
Max
150
3.3
75
2290
1490
2215
1490
1915
Min
2.0
0.5
55
−65 to +150
−40 to +85
23 to 41
33 to 35
Rating
100
140
100
265
−6
−6
50
90
60
85 C
2415
1615
2015
6
6
6
0.5
Typ
65
2540
1740
2540
1815
2115
Max
150
3.3
78
Units
mA
mA
mA
C/W
C/W
C/W
C/W
C/W
C/W
Unit
V
V
V
V
V
mA
mV
mV
mV
mV
mV
C
C
C
mA
mA
V