2SB166100MA Silan Microelectronics Joint-stock, 2SB166100MA Datasheet
2SB166100MA
Manufacturer Part Number
2SB166100MA
Description
LOW IR SCHOTTKY BARRIER DIODE CHIPS
Manufacturer
Silan Microelectronics Joint-stock
Datasheet
1.2SB166100MA.pdf
(1 pages)
2SB166100MA LOW I
DESCRIPTION
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (T
Reverse Voltage
Forward Voltage
Reverse Current
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
2SB166100MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Due to special schottky barrier structure, the chips
have very low reverse leakage current ( typical
I
operation junction temperature;
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
Chip Size: 1660 m X 1660 m;
Chip Thickness: 280±20 m;
Have two top side electrode materials for customer
to choose, detail refer to ordering specifications.
R
=0.002mA@ Vr=100V ) and maximum 150 C
Parameters
Parameters
R
SCHOTTKY BARRIER DIODE CHIPS
Symbol
V
V
I
BR
R
F
amb
=25 )
I
I
V
R
F
R
=5A
=0.5mA
Symbol
=100V
V
T
I
I
FSM
FAV
RRM
STG
T
Test Conditions
J
ORDERING SPECIFICATIONS
2SB166100MAYY
2SB166100MAYL
Product Name
Chip Topography and Dimensions
La: Chip Size: 1660mm;
Lb: Pad Size: 1565mm;
Ratings
-40~150
100
150
150
5
Min.
For Au and AlSi wire bonding
100
package
--
--
For Axial leads package
2SB166100MA
REV:1.0
Specification
Max.
0.85
0.5
--
www.DataSheet4U.com
Page 1 of 1
2007.04.27
Unit
Unit
mA
V
A
A
V
V
C
C
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