BC847AW Siemens Semiconductor Group, BC847AW Datasheet
BC847AW
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BC847AW Summary of contents
Page 1
NPN Silicon AF Transistor Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, Type Marking BC 846 AW 1 ...
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Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation Junction temperature Storage temperature range Thermal Resistance Junction - ambient 1) Junction - soldering point Package mounted on epoxy ...
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Characteristic ˚C, unless otherwise specified. A Description DC Characteristics Collector-emitter breakdown voltage = Collector-base breakdown voltage = 100 Collector-emitter breakdown voltage = ...
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Characteristics ˚C, unless otherwise specified. A Description AC Characteristics Transition frequency = 20 mA 100 MHz Output capacitance MHz CB ...
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Total power dissipation P * Package mounted on epoxy Permissible pulse load P Semiconductor Group = Collector-base capacitance C tot A S Emitter-base capacitance Transition frequency f tot max ...
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Collector cutoff current current gain Semiconductor Group = Collector-emitter saturation voltage CB0 ...
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Noise figure 0.2 mA kHz Semiconductor Group ...
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Noise figure 120 Noise figure kHz V CE Semiconductor Group BC 846W ... BC ...