PMBT6429 Philips, PMBT6429 Datasheet - Page 3

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PMBT6429

Manufacturer Part Number
PMBT6429
Description
NPN general purpose transistors
Manufacturer
Philips
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 27
R
I
I
h
V
V
C
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
th j-a
c
e
NPN general purpose transistors
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
PMBT6428
PMBT6429
PMBT6428
PMBT6429
PMBT6428
PMBT6429
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
E
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; I
= 100 mA; I
= 1 mA; V
= i
= i
= 1 mA; V
e
c
= 0; V
= 0; V
3
CB
EB
CONDITIONS
= 30 V
= 5 V
CB
EB
CE
CE
CE
B
CE
B
CE
= 0.5 mA
note 1
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 5 V
= 5 V; f = 100 MHz
= 5 V
= 5 mA
= 5 V
= 5 V
CONDITIONS
PMBT6428; PMBT6429
250
500
250
500
250
500
560
100
MIN.
VALUE
500
Product specification
10
10
650
1250
200
600
660
3
12
700
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
pF
pF
MHz
UNIT

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