2SD882ANL UTC, 2SD882ANL Datasheet - Page 2

• Manufacturer Part Number: 2SD882ANL
• Description: MEDIUM POWER LOW VOLTAGE TRANSISTOR
• Manufacturer: UTC

UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
TYPICAL PARAMETERS PERFORMANCE
UTC
10
10
10
10
10
10
10
10
1.6
1.2
0.8
0.4
3
2
1
0
3
2
1
0
0
10
10
0
0
0
Fig.1 Static characteristics
Collector-Emitter voltage (V)
RANGE
Collector-Base Voltage (v)
Collector current, Ic (mA)
RANK
Fig.4 Collector Output
Fig.7 DC current gain
4
10
1
10
capacitance
-1
I
B
=9mA
I
8
B
=8mA
f=1MHz
I
E
I
UNISONIC TECHNOLOGIES CO. LTD
=0
B
10
=7mA
2
I
12
B
V
=6mA
CE
10
I
B
-2
=2V
=5mA
10
I
I
I
I
3
B
B
B
B
=4mA
=3mA
=2mA
=1mA
16
10
20
-3
10
4
100-200
10
10
10
10
10
10
10
10
10
150
100
50
3
2
1
0
4
3
2
1
0
0
Q
10
10
-50
-2
0
Fig.2 Derating curve of safe
V
Fig.8 Saturation Voltage
CE
Collector current, Ic (mA)
Case Temperature, Tc ( )
Collector current, Ic (A)
(sat)
10
0
Fig.5 Current gain-
bandwidth product
1
operating areas
10
-1
V
BE
50
(sat)
V
I
I
B
B
CE
10
=8mA
=8mA
2
=5V
100
10
0
10
3
150
℃
200
10
160-320
10
1
4
P
10
10
10
10
12
-2
8
4
0
-1
1
0
-50
10
Ic(max),Pulse
Ic(max),DC
0
Fig.6 Safe operating area
Case Temperature,Tc ( )
Collector-Emitter Voltage
Fig.3 Power Derating
0
50
10
1
100
200-400
℃
150
E
QW-R211-016,B
200
10
2
2