FS2A Jinan Gude Electronic Device, FS2A Datasheet - Page 2

• Manufacturer Part Number: FS2A
• Description: 1.5 AMPS. FAST RECOVERY SILICON RECTIFIER
• Manufacturer: Jinan Gude Electronic Device

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
t
GSS
DSS
d (on)
r
d (off)
f
rr
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
fs
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
200
160
120
100
80
40
80
60
40
20
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
T
Pulse Test
Parameter
C
CASE TEMPERATURE T
= 25°C
OUTPUT CHARACTERISTICS
V
GS
1.0
50
= 20V 10V
(TYPICAL)
2.0
7V
100
8V
(Tch = 25 C)
3.0
I
V
V
I
I
I
I
V
V
I
Channel to case
I
D
D
D
D
D
S
S
GS
DS
DS
DD
= 25A, V
= 50A, dis/dt = –100A/ s
= 1mA, V
= 1mA, V
= 25A, V
= 25A, V
= 25A, V
150
= 150V, V
= 10V, V
= 20V, V
= 80V, I
P
4.0
C
D
= 150W
(°C)
DS
GS
GS
GS
DS
GS
DS
D
(V)
GS
6V
5V
DS
GS
= 10V
= 10V
= 10V
= 25A, V
= 0V
200
5.0
= 0V
= 10V
= 0V, f = 1MHz
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
50
40
30
20
10
= R
3
2
7
5
3
2
7
5
3
2
7
5
3
0
2
1
0
10
0
MAXIMUM SAFE OPERATING AREA
0
T
Single Pulse
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GS
V
C
GS
2
= 25°C
OUTPUT CHARACTERISTICS
= 50
3 5 7
= 20V
0.4
MITSUBISHI Nch POWER MOSFET
10
HIGH-SPEED SWITCHING USE
1
(TYPICAL)
0.8
10V 7V
2
Min.
150
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6V
3 5 7
1.2
10
Limits
0.600
6540
2
Typ.
860
360
155
380
180
130
3.0
1.0
24
55
95
—
—
—
—
T
Pulse Test
tw = 10ms
100ms
1ms
10ms
DC
2
1.6
C
FS50SM-3
3 5 7
= 25°C
DS
DS
(V)
(V)
5V
4V
0.775
Max.
0.83
0.1
4.0
1.5
2.0
10
—
31
—
—
—
—
—
—
—
—
—
0.1
3
Feb.1999
Unit
m
C/W
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A