IRG7PH50UPBF International Rectifier Corp., IRG7PH50UPBF Datasheet

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IRG7PH50UPBF

Manufacturer Part Number
IRG7PH50UPBF
Description
Insulated Gate Bipolar Transistor
Manufacturer
International Rectifier Corp.
Datasheet
1
Features
• Low V
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
V
I
I
I
I
I
V
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM
GE
Parameter
Parameter
= 15V
GE
= 20V
G
f
n-channel
f
C
E
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
Gate
IRG7PH50UPbF
G
IRG7PH50UPbF
C
IRG7PH50U-EP
TO-247AC
10 lbf·in (1.1 N·m)
-55 to +175
G C
Max.
Typ.
1200
0.24
±30
140
150
200
556
278
–––
90
50
40
E
Collector
I
C
V
= 90A, T
C
CE(on)
T
V
J(max)
CES
Max.
IRG7PH50U-EP
0.27
–––
–––
typ. = 1.7V
= 1200V
C
TO-247AD
=175°C
C
= 100°C
www.irf.com
Emitter
G C
07/28/2010
E
Units
Units
°C/W
°C
W
E
V
A
V

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IRG7PH50UPBF Summary of contents

Page 1

... I = 90A 100° =175°C J(max typ. = 1.7V CE(on TO-247AC TO-247AD IRG7PH50U-EP IRG7PH50UPbF G C Gate Collector Emitter Max. 1200 140 90 50 150 200 ±30 556 278 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. ...

Page 2

... IRG7PH50UPbF/IRG7PH50U-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... Tc = 25° 175°C Single Pulse 0. 100 V CE (V) Fig Forward SOA ≤ 25°C, T 175° www.irf.com IRG7PH50UPbF/IRG7PH50U- Frequency ( kHz ) (Load Current = I of fundamental) RMS 600 500 400 300 200 100 125 150 175 1000 10µsec 100 100µsec ...

Page 4

... IRG7PH50UPbF/IRG7PH50U-EP 200 150 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 30µs J 200 150 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 30µ 25A 50A 100A ...

Page 5

... OFF t F 100 (A) Fig Typ. Switching Time vs 175° 200µ 600V www.irf.com IRG7PH50UPbF/IRG7PH50U-EP 12000 10000 175° 200µ 16000 14000 12000 10000 60 80 100 C = 5.0Ω 15V T = 175° 200µH; V ...

Page 6

... IRG7PH50UPbF/IRG7PH50U-EP 10000 Cies 1000 Coes 100 Cres 10 0 100 200 300 V CE (V) Fig Typ. Capacitance vs 0V 1MHz 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC 6 400 500 600 ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit G force www.irf.com IRG7PH50UPbF/IRG7PH50U- VCC - Rg VCC Fig.C.T.4 - Resistive Load Circuit C force 100K D1 22K DUT 0.0075µF E force Fig.C.T.5 - BVCES Filter Circuit L DUT VCC Rg Fig.C.T.2 - RBSOA Circuit ...

Page 8

... IRG7PH50UPbF/IRG7PH50U-EP 1200 tf 1000 800 600 90 400 200 off Los s -200 -0.5 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 1200 120 100 1000 800 80 600 60 400 40 10% test 200 -200 -20 -3 1.5 2 Fig ...

Page 9

... TO-247AC package is not recommended for Surface Mount Application. www.irf.com IRG7PH50UPbF/IRG7PH50U-EP 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & 9 ...

Page 10

... IRG7PH50UPbF/IRG7PH50U-EP TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 "$C $% $& Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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