EMF9 ROHM Electronics, EMF9 Datasheet - Page 2

• Manufacturer Part Number: EMF9
• Manufacturer: ROHM Electronics

Transistors
! ! ! ! Absolute maximum ratings (Ta=25°C)
Tr1
Tr2
Tr1, Tr2
∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
! ! ! ! Electrical characteristics (Ta=25°C)
Tr1
Tr2
∗ P
Total power dissipation
∗ Single pulse P
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Emitter cut-off current
DC current gain
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source
Forward transfer admittance
Turn-on delay time
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Range of storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Channel temperature
Range of storage temperature
Collector-base breakdown voltage
Collector cut-off current
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Gate-threshold voltage
Input capacitance
Output capacitance
Reverce transfer capacitance
Rise time
Turn-off delay time
Fall time
W
≤10ms Duty cycle≤50%
on-state resistance
Parameter
Parameter
Parameter
W
=1ms
Parameter
Parameter
Continuous
Continuous
Pulsed
Pulsed
Symbol
Symbol
Symbol
V
V
V
V
Tstg
V
Tstg
I
Tch
I
I
I
DRP
P
CBO
CEO
EBO
I
Tj
DSS
GSS
I
CP
DP
DR
C
D
D
Symbol
V
Symbol
R
V
150(TOTAL)
BV
BV
BV
V
(BR)DSS
t
t
−55~+150
−55~+150
Cob
I
I
|Y
C
C
I
I
C
CE(sat)
DS(on)
h
GS(th)
d(on)
d(off)
CBO
GSS
DSS
EBO
f
t
t
oss
FE
rss
CEO
CBO
T
iss
Limits
Limits
EBO
fs
r
f
Limits
500
150
±20
100
200
100
200
150
|
1.0
15
12
30
6
Min.
Min.
270
0.8
30
20
12
15
−
−
−
−
−
−
−
−
−
−
−
6
−
−
−
−
−
Unit
Unit
mA
mA
mA
mA
mA
Unit
mW
°C
°C
°C
°C
V
V
V
A
V
V
Typ.
Typ.
∗
∗
∗
∗
100
320
7.5
13
15
35
80
80
−
−
−
−
5
7
−
9
4
−
−
−
−
−
−
Max.
Max.
100
100
250
680
1.0
1.5
±1
13
−
8
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
Unit
mS
mV
µA
µA
pF
pF
pF
nA
nA
pF
ns
ns
ns
ns
V
Ω
Ω
V
V
V
V
−
V
I
V
V
I
I
V
V
I
V
R
I
I
I
V
V
I
V
V
V
D
D
D
D
C
C
E
C
GS
DS
DS
DS
DS
GS
=10µA, V
=10mA, V
=1mA, V
=10mA, V
GS
CB
EB
CE
CE
CB
=1mA
=10µA
=10µA
=200mA, I
=30V, V
=3V, I
=3V, I
=5V, V
=±20V, V
=5V, R
=15V
=6V
=2V, I
=2V, I
=10V, I
=10Ω
D
D
C
E
GS
GS
=100µA
=10mA
L
=10mA
=−10mA, f=100MHz
E
GS
Conditions
=500Ω,
GS
GS
DD
Conditions
=0mA, f=1MHz
B
=2.5V
=0V, f=1MHz
DS
=0V
=10mA
=0V
=4V
=0V
5V,
EMF9
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