EMF6 ROHM Electronics, EMF6 Datasheet

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EMF6

Manufacturer Part Number
EMF6
Description
Manufacturer
ROHM Electronics
Datasheet

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Transistors
Power management (dual transistors)
EMF6
2SA2018 and 2SK3019 are housed independently in a EMT6 package.
! ! ! ! Application
Power management circuit
! ! ! ! Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
! ! ! ! Structure
Silicon epitaxial planar transistor
! ! ! ! Equivalent circuits
! ! ! ! Packaging specifications
Basic ordering unit (pieces)
Tr2
(3)
(4)
Package
Marking
Code
Type
(5)
(2)
(1)
(6)
Tr1
EMF6
EMT6
8000
T2R
F6
! ! ! ! External dimensions (Units : mm)
ROHM : EMT6
Abbreviated symbol:F6
( 4 )
( 5 )
( 6 )
1.2
1.6
Each lead has
( 3 )
( 2 )
( 1 )
same dimensions
EMF6
1/5

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EMF6 Summary of contents

Page 1

... Silicon epitaxial planar transistor ! ! ! ! Equivalent circuits (3) (2) (1) Tr1 Tr2 (4) (5) ( Packaging specifications Type EMF6 Package EMT6 F6 Marking T2R Code Basic ordering unit (pieces) 8000 ! ! ! ! External dimensions (Units : mm 1.2 1.6 ROHM : EMT6 Each lead has same dimensions Abbreviated symbol:F6 EMF6 1/5 ...

Page 2

... C oss − − rss − − d(on) − − − − d(off) − − EMF6 Unit Conditions =−1mA =−10µ =−10µ =−15V =− =−200mA, I =−10mA − ...

Page 3

... 100 1000 COLLECTOR CURRENT : I Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) 1000 =20 = Ta=25°C Pulsed 100 100 1000 EMITTER CURRENT : I E Fig.6 Gain bandwidth product vs. emitter current EMF6 1000 (mA) C 1000 (mA) 3/5 ...

Page 4

... V DS Pulsed 100m 50m 20m Ta=125°C 10m 75°C 25°C 5m −25° 0.5m 0.2m 0.1m 0.1 0.2 0.5 0 0.5 1 SOURCE-DRAIN VOLTAGE : V Fig.17 Reverse drain current vs. source-drain voltage ( Ι ) EMF6 = =0.1mA I D Pulsed 100 125 150 Ta=25°C Pulsed 15 20 ( Pulsed 1.5 (V) SD 4/5 ...

Page 5

... Ta =25°C f=1MH Z = iss 5 C oss C rss 2 1 0.5 0.1 0.2 0 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.19 Typical capacitance vs. drain-source voltage EMF6 1000 Ta =25° = 500 = d(off) =10Ω 200 Pulsed 100 d(on 0.1 0.2 0.5 1 ...

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