2SB0766 Panasonic Industrial Company/Electronic Components, 2SB0766 Datasheet

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2SB0766

Manufacturer Part Number
2SB0766
Description
VCEO(V) = -25 ;; IC(A) = -1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = MiniP3-F1
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB0766AR1GS
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SB0766, 2SB0766A
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A)
■ Features
■ Absolute Maximum Ratings T
Note) * : Print circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Large collector power dissipation P
• Mini type package, allowing downsizing of the equipment and automatic
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB0766
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
insertion through the tape packing and the magazine packing
2. * 1: Pulse measurement
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
85 to 170
2SB0766
2SB0766A
2SB0766A
*
2SB0766
2SB0766A
2SB0766
2SB0766A
* 1
Q
* 1
* 1
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
120 to 240
I
FE1
h
C
stg
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
* 2
R
−55 to +150
2
Rating
I
I
I
V
V
V
I
I
V
V
or more, and the board thickness of 1.7 mm for the collector portion.
C
C
E
C
C
−1.5
−30
−60
−25
−50
150
CB
Note) The part number in the parenthesis shows conventional part number.
CB
CE
CE
CB
−5
−1
= −10 µA, I
= −10 µA, I
= −2 mA, I
= −500 mA, I
= −500 mA, I
1
SJC00051CED
= −10 V, I
= −5 V, I
= −10 V, I
= −20 V, I
= −10 V, I
170 to 340
S
Conditions
Unit
B
C
°C
°C
C
W
E
V
V
V
A
A
E
C
E
E
= 0
= −1 A
(2SB766, 2SB766A)
= 0
= 0
B
B
= 50 mA, f = 200 MHz
= 0
= −500 mA
= 0, f = 1 MHz
= −50 mA
= −50 mA
Marking Symbol:
0.4
1.5
±0.08
±0.1
• 2SB0766: A
• 2SB0766A: B
1
3.0
4.5
1.6
Min
−30
−60
−25
−50
−5
85
50
±0.15
±0.1
±0.2
2
0.5
±0.08
3
− 0.85
− 0.2
Typ
200
20
MiniP3-F1 Package
45˚
−1.20
− 0.1
− 0.4
Max
340
1.5
30
±0.1
0.4
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1

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2SB0766 Summary of contents

Page 1

... Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings T Parameter 2SB0766 Collector-base voltage (Emitter open) 2SB0766A Collector-emitter voltage 2SB0766 (Base open) 2SB0766A Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation ...

Page 2

... 1.4 Copper plate at the collector 2 is more than area, 1.2 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a  BE(sat) C −100 = −10 25°C = −25° −1 75°C − 0.1 − ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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