BSP317 Infineon Technologies Corporation, BSP317 Datasheet - Page 2

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BSP317

Manufacturer Part Number
BSP317
Description
Sipmos Small-signal Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet

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1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
Electrical Characteristics, at T
Data Sheet
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
DS
GS
GS
= 0 V, I
= -200 V, V
= -200 V, V
= -130 V, V
= -20 V, V
= -10 V, I
V
DS,
I
D
D
= -1 mA
= -0.25 mA, T
D
DS
GS
GS
GS
= -0.37 A
= 0 V
= 0 V, T
= 0 V, T
= 0 V, T
j
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
2
1)
copper area for drain connection
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
2
Symbol
T
T
R
R
j
stg
thJA
thJS
min.
-
-
-
-
-
-200
-0.8
Values
typ.
-
-
-1.1
-0.1
-10
-10
3.4
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
E
70
10
max.
-
-2
-1
-100
-100
-100
6
BSP 317
Unit
˚C
K/W
Unit
V
µA
nA
nA
05.99

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