BSP308 Infineon Technologies Corporation, BSP308 Datasheet - Page 4

• Manufacturer Part Number: BSP308
• Description: Sipmos(r) Small-signal-transistor: 30v, 4.7a
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= 15 V, I
= 15 V, I
= 24 V, I
= 24 V, I
= 24 V, I
= 24 V , I
= 0 V, I
F
F =
F
= I
D
D
D
= 4.7 A
D
l
S
S
= 4.7 A
= 4.7 A
= 4.7 A, V
= 4.7 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to 10 V
j
= 25 °C, unless otherwise specified
Preliminary data
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
typ.
14.5
typ.
0.84
38.4
22.3
1.9
5.4
3.1
-
-
max.
max.
18.8
57.6
33.5
2.9
8.1
4.7
1.1
22
1999-09-22
-
BSP308
Unit
nC
V
Unit
A
V
ns
nC