PIC12F675ISN Microchip Technology, PIC12F675ISN Datasheet - Page 85

• Manufacturer Part Number: PIC12F675ISN
• Description: 8-Pin FLASH-Based 8-Bit CMOS Microcontrollers
• Manufacturer: Microchip Technology

12.0
Absolute Maximum Ratings†
Ambient temperature under bias........................................................................................................... -40 to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by all GPIO ................................................................................................................ 125 mA
Maximum current sourced all GPIO ................................................................................................................ 125 mA
Note 1: Power dissipation is calculated as follows: P
 2003 Microchip Technology Inc.
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Voltage spikes below V
a series resistor of 50-100
this pin directly to V
DD
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
SS
I
(Vo < 0 or Vo >V
< 0 or V
pin ........................................................................................................................ 250 mA
pin ..................................................................................................................... 300 mA
SS
SS
.
SS
I
> V
..................................................................................................... -0.3 to +6.5V
at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus,
Ω
DD
should be used when applying a "low" level to the MCLR pin, rather than pulling
SS
)...............................................................................................................± 20 mA
DD
........................................................................... -0.3V to (V
).........................................................................................................± 20 mA
DIS
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
PIC12F629/675
DD
-V
OH
) x I
OH
DS41190C-page 83
} + ∑(V
DD
+ 0.3V)
O
l x I
OL
).