STB9NK60ZD ST Microelectronics, Inc., STB9NK60ZD Datasheet - Page 3

• Manufacturer Part Number: STB9NK60ZD
• Description: N-channel 600V - 0.85 Ohm - 7A TO-220/TO-220FP/D2PAK Fast Diode Supermesh MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
Q
SD
t
t
oss
t
t
t
t
iss
rss
rr
rr
gs
gd
c
r
(1)
f
f
g
rr
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
DS
Parameter
Parameter
Parameter
Parameter
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
D
V
SD
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
DD
G
G
G
=25°C UNLESS OTHERWISE SPECIFIED)
DS
= 1mA, V
= 4.7
= 4.7
= 4.7
= 7 A, V
= 7 A, di/dt = 100A/µs
= 7 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 0V, V
= 300 V, I
= 480V, I
= 10V
= 300 V, I
= 480V, I
= 30V, T
= 30V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
, I
,
V
V
V
GS
GS
DS
I
D
D
GS
GS
D
GS
j
j
D
D
= 25°C
= 150°C
D
D
= 3.5 A
= 100µA
= 3.5 A
= 0
= 0
= 0V to 480V
= 7 A,
= 7 A,
= 10 V
= 10 V
= 3.5 A
= 3.5 A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
2.5
oss
when V
1110
Typ.
Typ.
0.85
Typ.
Typ.
Typ.
135
150
663
194
935
3.5
5.3
8.7
8.5
9.6
DS
30
72
22
17
41
21
42
15
11
20
8
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
0.95
±10
4.5
1.6
50
53
28
1
7
Unit
Unit
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
3/12
V
V
S
A
A
V
A
A