STB11NM80 ST Microelectronics, Inc., STB11NM80 Datasheet - Page 3

• Manufacturer Part Number: STB11NM80
• Description: N-channel 800 V - 0.35 Ohm - 11 a TO-220/TO-220FP/D2PAK/TO-247 Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
C
SD
C
C
r(Voff)
d(on)
Q
Q
fs
RRM
I
2. Pulse width limited by safe operating area.
R
Q
Q
SD
t
oss
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
G
f
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
V
D
SD
SD
DS
DD
DD
GS
DD
DD
G
G
DS
= 7.5 A
= 4.7
= 4.7
= 11 A, V
= 11 A, di/dt = 100A/µs,
> I
= 400 V, I
= 400 V, I
= 10 V
= 640 V, I
= 100V, T
= 30 V, f = 1 MHz, V
Test Conditions
Test Conditions
D(on)
Test Conditions
Test Conditions
, V
x R
V
GS
D
D
D
j
GS
GS
= 150°C
DS(on)max,
= 5.5 A
= 11 A,
= 0
= 11A,
= 10V
= 10V
GS
= 0
Min.
Min.
Min.
Min.
Typ.
Typ.
496
1900
1000
6.5
Typ.
Typ.
26
21
11
6
18
27
14
40
10
24
5
2
Max.
Max.
Max.
Max.
1.5
11
44
58
Unit
Unit
Unit
Unit
µC
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
ns
ns
A
A
V
A
S
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