SMG1333 SeCoS Halbleitertechnologie, SMG1333 Datasheet - Page 2

• Manufacturer Part Number: SMG1333
• Description: P-channel Enhancement Mode Power Mos.fet
• Manufacturer: SeCoS Halbleitertechnologie

01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Source-Drain Diode
Notes: 1.Pulse width limited by Max. junction temperature.
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Rise Time
Turn-off Delay Time
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current (Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Forward Transconductance
Forward On Voltage
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch
Elektronische Bauelemente
Parameter
Parameter
2
≦
2
2
2
2
copper pad of FR4 board; 270
o
o
C
C
≦
BV
Symbol
Symbol
o
R
Td
BV
Td
V
Crss
Ciss
Coss
V
DS
I
DS(ON)
Qg
Qgs
Qgd
Gfs
I
GS(th)
T f
GSS
Tr
DSS
SD
(ON)
(Off)
DSS
/ Tj
Min.
-0.5
Min.
-20
_
_
_
_
_
_
_
_
_
_
_
_
_
_
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P-Channel Enhancement Mode Power Mos.FET
° C/W
Typ.
Typ.
-0.01
1.0
0.3
25
0.4
10
66
20
1.7
_
5
8
2
when mounted on min. copper pad.
_
_
_
_
_
_
_
_
-550mA, -20V,R
Max.
105.6
±
Max.
600
1000
-10
800
-1.2
-1.2
2.7
100
-1
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_
_
_
_
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_
SMG1333
Any changing of specification will not be informed individual
Unit
V/
Unit
m
V
nA
uA
uA
V
nC
pF
nS
S
V
Ω
DS(ON)
Reference to 25
V
V
V
V
V
V
V
V
V
R
V
V
V
I
R
I
V
V
V
Test Condition
D
D
f=1.0MHz
GS
DS
GS
DS
DS
Test Condition
GS
GS
DS
GS
DS
I
GS
DS
G
GS
=-500mA
D
=-500mA
GS
DS
S
=3.3
=20
=V
=0V, I
=-20V,V
=-16V,V
=-300mA, V
= 12V
=-10V, I
=-4.5V, I
=-10V
=-5V
=-5V, I
=-2.5V, ID=-300mA
=-16V
=-4.5V
=0V
=-10V
±
GS,
800m
Ω
Ω
I
D
D
=-250uA
D
=-250uA
=-550mA
GS
GS
D
D
=-550mA
=-500mA
Ω
=0
=0
o
C
GS
,I
D
=0V.
=- 1mA
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