CEM9952A Chino Excel Technology, CEM9952A Datasheet
CEM9952A
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CEM9952A Summary of contents
Page 1
... Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Drain Current-Continuous @T b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient CEM9952A @V =10V =4.5V =-10V =-4.5V DS(ON) ...
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... CEM9952A N-Channel ELECTRICAL CHARACTERISTICS (T Parameter 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...
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... Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CEM9952A =25 C unless otherwise noted) A Symbol Condition V =0V, I =-250µ DSS I ...
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... CEM9952A ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 1 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1200 ...
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... Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 7.0 6.0 5.0 4.0 3.0 V =15V DS 2 Drain-Source Current (A) DS Figure 7. Transconductance Variation with Temperature CEM9952A 1.15 1.10 I =250 A D 1.05 1.00 0.95 0.90 0.85 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 10.0 8.0 5.0 1 0.3 0 Body Diode Forward Voltage (V) DS Figure 8 ...
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... CEM9952A P-Channel -25 V =10V GS 5 -20 -15 - -1.0 -1 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1200 1000 800 600 400 200 Drain-to-Source Voltage (V) DS Figure 3. Capacitance -7V -6V -5V -4V -3V -2.0 -2.5 -3.0 -3.5 Ciss Coss Crss 5-176 -20 - -16 T =125 C ...
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... Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 7.0 6.0 5.0 4.0 3.0 V =-15V DS 2 Drain-Source Current (A) DS Figure 7. Transconductance Variation with Temperature CEM9952A 1.15 1.10 I =-250 A D 1.05 1.00 0.95 0.90 0.85 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 10.0 8.0 5.0 1.0 0 0.3 0 Body Diode Forward Voltage (V) DS Figure 8 ...
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... CEM9952A N-Channel 10 V =10V =3. Qg, Total Gate Charge (nC) Figure 9. Gate Charge P-Channel 10 V =-10V =-2. Qg, Total Gate Charge (nC) Figure 9. Gate Charge 5-178 0.1 V =10V ...
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... GEN G S Figure 11. Switching Test Circuit 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve CEM9952A d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 12. Switching Waveforms - 5-179 ...