CEM7350 Chino-Excel Technology Corp., CEM7350 Datasheet - Page 2

• Manufacturer Part Number: CEM7350
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: Chino-Excel Technology Corp.

N-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
I
GSSF
Q
GSSR
I
DSS
t
t
SD
oss
iss
rss
S
r
gd
f
gs
DSS
g
2
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
GS
DS
GS
GS
GS
GS
DS
DD
GS
DS
GS
GS
A
Test Condition
= 25 C unless otherwise noted
= 0V, I
= 100V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 25V, V
= 50V, I
= 10V, R
= 80V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
D
= 250 µ A
= 1.8A
GS
GEN
DS
DS
= 2.1A,
= 250 µ A
= 2.1A
= 1A,
GS
= 0V,
= 0V
= 0V
= 22
= 0V
Min
100
2
CEM7350
12.4
Typ
150
316
2.0
5.4
93
37
12
10
30
18
-100
Max
190
100
1.8
1.3
25
20
55
35
16
1
4
Units
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
V
5