MCH6660 Sanyo Semicon Device, MCH6660 Datasheet

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MCH6660

Manufacturer Part Number
MCH6660
Description
N-Channel and P-Channel Silicon MOSFETs
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet.co.kr
Ordering number : ENA1993
MCH6660
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-006
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance Nch : R DS (on)1=105m Ω (typ.)
1.8V drive
Halogen free compliance
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
Pch : R DS (on)1=205m Ω (typ.)
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
MCH6660
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
6
1
TL
2
×0.8mm) 1unit
5
2
N0911PE TKIM TC-00002657
DATA SHEET
4
3
N-channel
: MCPH6
: SC-88, SOT-363
Marking
--55 to +150
±10
20
2
8
150
0.8
XM
P-channel
--1.5
--20
±10
--6
No. A1993-1/6
Unit
°C
°C
W
A
A
V
V
Datasheet pdf - http://www.DataSheet4U.net/

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MCH6660 Summary of contents

Page 1

... Source1 2 : Gate1 3 : Drain2 Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 MCH6660 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & ...

Page 2

... Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage MCH6660 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V =0V ...

Page 3

... Ta=25°C 1.5V 0.5 0.6 0.7 0.8 0.9 1.0 IT16372 [Nch] Ta=25° IT16645 --10V --750mA =13.3Ω OUT PW=10μs D.C.≤1% G MCH6660 P.G 50Ω 2 =10V 2.0 1.5 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage (on 400 350 300 250 200 150 100 50 0 ...

Page 4

... Drain Current 4 =10V I D =2A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.2 0.4 0.6 0.8 Total Gate Charge --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0 --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage MCH6660 [Nch =10V 0.001 1.0 10 IT16376 [Nch] 1000 V DD =10V V GS =4. (on 1.0 10 IT16378 [Nch] 1.0 1.2 1.4 1.6 1.8 2.0 IT16380 [Pch] --0.5 --0.6 --0.7 --0.8 --0 ...

Page 5

... Drain Current --4 --10V --1.5A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.2 0.4 0.6 0.8 Total Gate Charge MCH6660 [Pch] Ta=25 ° C --5 --6 --7 --8 --9 --10 IT16648 [Pch --10V --1.0 IT14618 [Pch --10V --4. (on --1.0 ...

Page 6

... Ambient Temperature °C Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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