SI7738DP Vishay Siliconix, SI7738DP Datasheet - Page 4

no-image

SI7738DP

Manufacturer Part Number
SI7738DP
Description
Dual N-Channel 150-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7738DP
Manufacturer:
AAT
Quantity:
482
Part Number:
SI7738DP-T1-E3
Manufacturer:
VISHAY
Quantity:
8 720
Part Number:
SI7738DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7738DP-T1-GE3
Manufacturer:
LT
Quantity:
1 432
Part Number:
SI7738DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
26 523
Part Number:
SI7738DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7738DP-T1-GE3
Quantity:
9 000
Company:
Part Number:
SI7738DP-T1-GE3
Quantity:
70 000
www.DataSheet.co.kr
Si7738DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
100
4.2
3.8
3.4
3.0
2.6
2.2
1.8
10
- 50
1
0.0
0
On-Resistance vs. Gate-to-Source Voltage
- 25
I
Source-Drain Diode Forward Voltage
D
= 7.7 A
0.2
2
V
V
SD
GS
0
- Source-to-Drain Voltage (V)
Threshold Voltage
- Gate-to-Source Voltage (V)
T
J
25
- Temperature (°C)
0.4
T
4
J
= 150 °C
50
I
D
0.6
6
= 250 µA
75
100
T
T
T
J
J
0.8
J
= 125 °C
= 25 °C
8
= 25 °C
125
New Product
150
1.0
10
0.001
Single Pulse Avalanche Current Capability vs. Time
0.01
100
100
150
120
10
0.1
90
60
30
10
1
0
0.01
1
0.1
10
-4
Limited by R
* V
Single Pulse
Safe Operating Area, Junction-to-Ambient
Single Pulse Power (Junction-to-Ambient)
T
A
GS
= 25 °C
125 °C
> minimum V
0.1
V
DS
1
10
DS(on)
-3
- Drain-to-Source Voltage (V)
*
1
GS
Time (s)
at which R
t
av
10
10
S09-0536-Rev. C, 06-Apr-09
(s)
-2
25 °C
Document Number: 69982
10
DS(on)
100
10
is specified
100
-1
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
1000
1000
1
Datasheet pdf - http://www.DataSheet4U.net/

Related parts for SI7738DP