RF1K49093 Intersil Corporation, RF1K49093 Datasheet - Page 7

• Manufacturer Part Number: RF1K49093
• Description: 2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
• Manufacturer: Intersil Corporation

PSPICE Electrical Model
SUBCKT RF1K49093 2 1 3;
CA 12 8 8.75e-10
CB 15 14 8.65e-10
CIN 6 8 7.65e-10
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 5 11 17 18 -23.75
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 7.36e-3
RGATE 9 20 6.1
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 4.56e-2
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.558
.MODEL DBDMOD D (IS = 3.0e-13 RS = 4.4e-2 TRS1 = 1.0e-3 TRS2 = -7.37e-6 CJO = 1.27e-9 TT = 2.2e-8)
.MODEL DBKMOD D (RS = 7.84e-2 TRS1 = -4.27e-3 TRS2 = 5.77e-5)
.MODEL DPLCAPMOD D (CJO = 2.85e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -2.1423 KP = 9.206 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.61e-4 TC2 = -1.09e-6)
.MODEL RDSMOD RES (TC1 = 2.10e-3 TC2 = 6.99e-6)
.MODEL RVTOMOD RES (TC1 = -1.82e-3 TC2 = 1.47e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.47 VOFF= 3.47)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.47 VOFF= 5.47)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.05 VOFF= -3.95)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.95 VOFF= 1.05)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
8-158
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
rev 10/24/94
GATE
1
LGATE RGATE
9
CA
20
12
RF1K49093
+
S1A
S1B
EVTO
ESG
18
8
EGS
13
-
8
10
-
+
6
8
+
-
RIN
14
13
6
8
6
13
S2A
S2B
DPLCAP
-
VTO
15
EDS
CB
CIN
+
16
+
-
5
8
5
14
RDRAIN
MOS1
21
8
EBREAK
RSOURCE
DBREAK
MOS2
17
17
18
11
RBREAK
+
-
IT
7
LSOURCE
LDRAIN
DBODY
18
19
+
-
RVTO
SOURCE
VBAT
DRAIN
2
3