SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet

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SPB80P06PG

Manufacturer Part Number

SPB80P06PG

Description

P-channel Mosfets Power-transistor

Manufacturer

Infineon Technologies Corporation

Datasheet

1.SPB80P06PG.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SPB80P06PG

Manufacturer:

OMRON

Quantity:

6 000

Company:

H&T Electronics

H&T Electronics

Part Number:

SPB80P06PG

Quantity:

4 800

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SPB80P06PGATMA1

Manufacturer:

INFINEON

Quantity:

7 600

Current page: 1 of 9
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(TO263-3)

• P-Channel

• Enhancement mode

• Avalanche rated

• dv/dt rated

• 175°C operating temperature

• Pb-free lead plating; RoHs compliant

Maximum Ratings,at T

Parameter

Continuous drain current

T

T

Pulsed drain current

T

Avalanche energy, single pulse

I

Avalanche energy, periodic limited by T

Reverse diode d v /d t

I

T

Gate source voltage

Power dissipation

T

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

1 Current limited by bondwire; with an R

Type

SPP80P06P

SPB80P06P G

D

S

C =

C

C

jmax

C

= -80 A, V

= -80 A , V

= 100 °C

= 25 °C

= 25 °C

SIPMOS

Features

·

·

·

·

·

Rev 1.2

25 °C,

Enhancement mode

175°C operating temperature

P-Channel

Avalanche rated

d v /d t rated

= 175 °C

1)

DS

DD

= -48 , d i /d t = 200 A/µs,

Power-Transistor

= -25 V, R

PG-TO263-3

P-TO220-3

Package

j

= 25 °C, unless otherwise specified

GS

= 25

thJC

Lead free

No

Yes

W

= 0.4 K/W the chip is able to carry I

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

jmax

Page 1

Symbol

I

I

E

E

d v /d t

V

P

T

D

D puls

j ,

AS

AR

GS

tot

T

stg

D

-55...+175

55/175/56

= -91A

Value

Pin 1

-320

823

±20

340

-80

-64

34

6

G

V

R

I

D

DS

DS(on)

PIN 2/4

SPB80P06P G

SPP80P06P

D

2008-02-18

0.023

-60

-80

Unit

A

mJ

kV/µs

V

W

°C

PIN 3

S

V

W

A

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