SPB18P06PG Infineon Technologies Corporation, SPB18P06PG Datasheet

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SPB18P06PG

Manufacturer Part Number

SPB18P06PG

Description

P-channel Mosfets Power-transistor

Manufacturer

Infineon Technologies Corporation

Datasheet

1.SPB18P06PG.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SPB18P06PG

Manufacturer:

Infineon

Quantity:

1 350

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SPB18P06PG

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SPB18P06PGATMA1

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Download datasheet (316Kb)

Rev 1.3

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by

T

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

SIPMOS

• Pb-free lead plating; RoHS compliant

Type

SPB18P06P PG-TO263-3

jmax

®

Power-Transistor

Package

j

=25 °C, unless otherwise specified

Tape and reel information

Symbol Conditions

I

I

E

E

dv /dt

V

P

T

D

D,pulse

j

AS

AR

GS

tot

, T

stg

T

T

T

I

I

di /dt =-200 A/µs,

T

T

D

D

page 1

A

A

A

j,max

A

=18.7 A, R

=18.7 A, V

=25 °C

=100 °C

=25 °C

=25 °C

=175 °C

DS

GS

Product Summary

V

R

I

D

=48 V,

=25 Ω

DS

DS(on),max

Marking

8

Lead free

Yes

steady state

"-55 ... +175"

55/175/56

PG-TO263-3

260 °C

Value

-18.7

-13.2

-74.8

81.1

151

±20

-6

SPB18P06P G

Packing

-18.6

0.13

-60

Unit

A

mJ

kV/µs

V

W

°C

V

Ω

A

2008-02-18

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