XP161 Guangdong Kexin Industrial, XP161 Datasheet
XP161
Manufacturer Part Number
XP161
Description
N-channel Power Mosfet
Manufacturer
Guangdong Kexin Industrial
Datasheet
1.XP161.pdf
(1 pages)
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■ Features
● Gate protect diode built-in
■ Absolute Maximum Ratings Ta = 25℃
■ Electrical Characteristics Ta = 25℃
● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V )
● Ultra high-speed switching
● Driving Voltage : 1.5V
SMD Type
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse)
Power dissipation *
Channel temperature
Storage temperature
* When implemented on a ceramic PCB
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Parameter
Parameter
Rds (on) = 0.095Ω ( Vgs = 2.5V )
Rds (on) = 0.20Ω ( Vgs = 1.5V )
N-Channel Power MOSFET
Symbol
│Y
V
R
t
t
I
I
GS(off)
C
C
DS(on)
C
d(on)
d(off)
GSS
DSS
t
t
rss
iss
oss
fs
r
f
│ V
Symbol
V
V
T
T
I
P
DSS
GSS
I
DP
V
V
V
V
V
V
V
I
D
stg
ch
D
D
DS
GS
DS
DS
GS
GS
GS
DS
=2A,V
=20V,V
=10V,I
=10V,I
=10V,V
=±8V,V
=4.5V,I
=2.5V,I
=1.5V,I
XP161
GS(on)
D
D
D
D
D
GS
GS
=1mA
=2A
-55 to +150
DS
=2A
=2A
=0.5A
Testconditons
=5V,V
=0
=0,f=1MHZ
Rating
=0
150
±8
20
16
4
2
DD
=10V
0.48
1
+0.1
-0.1
1
SOT-89
2
Unit
4.50
1.80
3.00
℃
℃
V
V
A
A
W
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
0.53
3
+0.1
-0.1
Min
0.5
www.kexin.com.cn
0.042 0.055
0.070 0.095
0.12
Typ
390
210
10
90
10
15
85
45
MOSFET
±10
0.20
Max
1.2
0.44
10
1.50
+0.1
-0.1
+0.1
-0.1
Unit
μA
μA
pF
pF
pF
Ω
Ω
Ω
ns
ns
ns
ns
Unit: mm
1. Source
2. Drain
3. Gate
V
1 Gate
2 Drain
3 Source
s
1. Base
2. Collector
3. Emiitter
1
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