SI7460DP-T1 Vishay Intertechnology, SI7460DP-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7460DP-T1
• Description: N-channel 60-V (d-s) Fast Switching Mosfet
• Manufacturer: Vishay Intertechnology

Document Number: 72126
S-03416—Rev. A, 03-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 18 A
0.2
On-Resistance vs. Drain Current
= 30 V
8
V
T
20
J
SD
Q
= 150_C
g
I
- Source-to-Drain Voltage (V)
D
0.4
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
16
40
0.6
24
0.8
V
V
GS
GS
60
T
= 4.5 V
32
= 10 V
J
= 25_C
1.0
40
80
1.2
0.020
0.016
0.012
0.008
0.004
0.000
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
-25
V
I
D
GS
10
= 18 A
V
V
2
= 10 V
GS
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
C
20
oss
Capacitance
25
4
Vishay Siliconix
I
30
50
D
= 18 A
C
iss
6
75
Si7460DP
40
100
www.vishay.com
8
50
125
150
10
60
3