ATA5575M1 ATMEL Corporation, ATA5575M1 Datasheet - Page 6

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ATA5575M1

Manufacturer Part Number
ATA5575M1
Description
Manufacturer
ATMEL Corporation
Datasheet
6. Electrical Characteristics (Continued)
T
6
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
amb
10.1
10.2
10.3
11.1
11.2
No.
7.1
7.2
8
9
= +25°C; f
1. I
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since the EEPROM performance is influenced by assembly processes, Atmel can not confirm the parameters for -DDW
Parameters
Clock detection level
Gap detection level
Programming time
Endurance
Data retention
Resonance capacitor
ATA5575M1 [Preliminary]
(tested die on unsawn wafer) delivery.
DD
coil
measurement setup: EEPROM programmed to 00 ... 000 (erase all); chip in modulation defeat.
= 125 kHz; unless otherwise specified
Test Conditions
V
V
From last command gap
to re-enter read mode
(64 + 648 internal clocks)
Erase all / write all
Top = 55°C
Top = 150°C
Top = 250°C
Mask option
V
coil pp
coil pp
coil pp
= 8V
= 8V
= 1V
(3)
(4)
(3)
(3)
(3)
V
Symbol
gapdet med
t
t
t
V
retention
retention
retention
n
T
clkdet
cycle
C
prog
r
100000
Min.
TBD
TBD
TBD
TBD
10
96
24
5
Typ.
550
550
330
250
5.7
20
Max.
TBD
TBD
TBD
TBD
50
6
Cycles
Years
Unit
mV
mV
ms
hrs
hrs
pF
9167AS–RFID–11/09
Type*
Q
Q
Q
T
T
T
T
T

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