RN4911 Toshiba America Electronic Components, Inc., RN4911 Datasheet
RN4911
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RN4911 Summary of contents
Page 1
... Collector current TOSHIBA Transistor RN4911 R1: 10kΩ (Q1, Q2 Common) Symbol Rating Unit V −50 V CBO V −50 V CEO V −5 V EBO I −100 mA C Symbol Rating Unit CBO CEO EBO I 100 RN4911 Unit: mm JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg 2001-06-07 ...
Page 2
... Q1, Q2 Common Maximum Ratings Characteristic Collector power dissipation Junction temperature Storage temperature range * Total rating Marking Equivalent Circuit (Top View) (Ta = 25° ° ° ° C) Symbol Rating Unit P 200 °C T 150 j °C T −55~150 stg 2 RN4911 2001-06-07 ...
Page 3
... I = 5mA ― 10V MHz ― (Ta = 25°C) Test Symbol Test Condition Circuit R1 ― ― 3 RN4911 Min Typ. Max Unit ― ― −100 nA ― ― −100 mA 120 ― 400 ― ― −0.1 −0.3 V ― 200 ― ...
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... Q1 4 RN4911 2001-06-07 ...
Page 5
... Q2 5 RN4911 2001-06-07 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 RN4911 000707EAA 2001-06-07 ...