BFR520 Philips Semiconductors (Acquired by NXP), BFR520 Datasheet - Page 2

• Manufacturer Part Number: BFR520
• Description: BFR520; NPN 9 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
DESCRIPTION
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
QUICK REFERENCE DATA
Note
1. T
September 1995
V
V
I
P
h
C
f
G
F
SYMBOL
C
T
S
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistor
UM
21
s
2
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
PIN
1
2
3
R
up to T
I
I
I
I
T
I
T
I
T
T
T
T
C
C
C
C
C
C
amb
amb
amb
s
amb
s
amb
s
amb
BE
= 20 mA; V
= i
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
=
=
=
= 0
c
base
emitter
collector
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
opt
opt
opt
= 0; V
s
Code: N28
; I
; I
; I
= 97 C; note 1
DESCRIPTION
C
C
C
2
= 5 mA; V
= 20 mA; V
= 5 mA; V
CB
CONDITIONS
CE
CE
CE
CE
CE
= 6 V; f = 1 MHz
= 6 V
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
= 6 V;
CE
CE
CE
= 6 V;
= 8 V;
= 6 V;
fpage
60
13
MIN.
Top view
1
Fig.1 SOT23.
Product specification
120
0.4
9
15
9
14
1.1
1.6
1.9
TYP.
3
MSB003
BFR520
20
15
70
300
250
1.6
2.1
MAX. UNIT
2
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB