STT432S SamHop Microelectronics Corp., STT432S Datasheet - Page 2

• Manufacturer Part Number: STT432S
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

STT432S
ELECTRICAL CHARACTERISTICS
Symbol
R
C
C
C
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BV
I
I
V
g
t
t r
t
t f
Q
Q
Q
I
V
DSS
GSS
D(ON)
D(OFF)
S
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
Notes
FS
DS(ON)
ISS
OSS
RSS
GS(th)
g
gs
gd
SD
DSS
Parameter
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
J
=25
°
C,L=0.5mH,V
_
DD
= 20V.(See Figure13)
b
c
_
c
( T
_
A
=25 ° C unless otherwise noted )
Conditions
V
V
V
V
V
V
V
I
V
R
V
V
V
V
V
V
V
f=1.0MHz
D
GS
GS
GS
DS
DS
DS
DS
DD
GS
DS
GS
GS
GS
GEN
DS
DS
=1A
=32V , V
=10V , I
=4.5V , I
=0V , I
=V
=5V , I
=20V,V
=20V
=20V,I
=20V,I
=20V,I
= ±20V , V
=10V
=10V
=0V,I
= 6 ohm
GS
2
S
, I
D
=2.5A
D
D
D
D
=250uA
D
GS
=11A
=11A,
D
=11A,V
=11A,V
GS
D
=250uA
=11A
=10A
=0V
=0V
DS
=0V
GS
GS
=10V
=4.5V
Min
40
1
www.samhop.com.tw
1160
18.2
11.2
Typ
140
0.76
218
1.5
5.4
65
16
22
2.5
26
11
40
9
±100
11.5
Max
1.2
2.5
15
1
3
Aug,04,2009
Ver 1.0
m ohm
m ohm
Units
uA
nA
ns
ns
ns
ns
nC
nC
nC
nC
pF
pF
pF
A
V
V
V
S