2N6304 Microsemi Corporation, 2N6304 Datasheet - Page 2

• Manufacturer Part Number: 2N6304
• Description: RF NPN Transistor
• Manufacturer: Microsemi Corporation

(on)
ELECTRICAL SPECIFICATIONS (Tcase = 25 C)
STATIC
(off)
DYNAMIC
MSC1323.PDF 10-25-99
Symbol
Symbol
BVCEO
BVCBO
BVEBO
ICBO
CCB
HFE
NF
f
T
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100
Emitter-Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
Collector Cutoff Current
(VCB = 5.0 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Noise Figure (50 Ohms)
(IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz)
Collector-Base Capacitance
(VCB = 10Vdc, IE = 0, f = 1 MHz)
Adc, IE=0)
Test Conditions
Test Conditions
Min.
Min.
3.5
1.4
25
15
30
-
-
Value
Value
Typ.
Typ.
5.0
0.8
-
-
-
-
-
-
2N6304
Max.
Max.
250
1.0
10
-
-
-
-
nAdc
Unit
Unit
GHz
Vdc
Vdc
dB
pF
Vdc
-