ZLLS500_06 Zetex Inc., ZLLS500_06 Datasheet

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ZLLS500_06

Manufacturer Part Number
ZLLS500_06
Description
40V Silicon HIGH Current LOW Leakage Schottky Diode
Manufacturer
Zetex Inc.
Datasheet
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance
combination comprising high current operation, extremely low leakage and low forward
voltage ensuring suitability for applications requiring efficient operation at higher
temperatures (above 85 C) see Operational efficiency chart on page 4.
Key benefits:
FEATURES
• Extremely low leakage (10 A @30V)
• High current capability (I
• Low V
• SOT23 package
• ZLLS500 complements low temperature equivalent ZHCS500
• Package thermally rated to 150 C
APPLICATIONS
• DC - DC converters
• Strobes
• Mobile phones
• Charging circuits
• Motor control
ORDERING INFORMATION
DEVICE MARKING
L05
ISSUE 3 - MAY 2006
DEVICE
ZLLS500TA 7
ZLLS500TC 13
F
, fast switching Schottky
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
REEL
(inches)
R
= 40V; I
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
F
= 0.7A)
F
= 0.7A; I
QUANTITY
PER REEL
3000 units
10000 units
R
= 10 A
1
S E M I C O N D U C T O R S
Top view
ZLLS500

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ZLLS500_06 Summary of contents

Page 1

SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode V = 40V 0.7A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage ...

Page 2

ZLLS500 ABSOLUTE MAXIMUM RATINGS PARAMETER Schottky Diode Continuous reverse voltage Forward current Peak repetitive forward current Rectangular pulse duty cycle Non repetitive forward current Package Power dissipation at T =25 C amb single die continuous single die measured at t<5 ...

Page 3

ISSUE 3 - MAY 2006 TYPICAL CHARACTERISTICS 3 ZLLS500 ...

Page 4

ZLLS500 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) SCHOTTKY DIODE CHARACTERISTICS PARAMETER SYMBOL MIN. Reverse breakdown voltage V (BR)R Forward voltage V F Reverse current I R Diode capacitance C D Reverse recovery time t rr Reverse recovery ...

Page 5

ISSUE 3 - MAY 2006 TYPICAL CHARACTERISTICS 5 ZLLS500 ...

Page 6

ZLLS500 Package Outline Package Dimensions Millimeters DIM Min Max Min A 2.67 3.05 0.105 B 1.20 1.40 0.047 C – 1.10 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 ...

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