BAR74E6327 Infineon Technologies Corporation, BAR74E6327 Datasheet
BAR74E6327
Manufacturer Part Number
BAR74E6327
Description
Silicon Switching Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAR74E6327.pdf
(4 pages)
Silicon Switching Diode
Type
BAR74
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
For high-speed switching applications
thJA
please refer to Application Note Thermal Resistance
1)
S
= 54 °C
Marking
JBs
s
1 = A
1
Pin Configuration
Symbol
V
V
I
I
P
T
T
R
F
FS
j
stg
R
RM
tot
thJS
2 = n.c.
3 = C
1
-65 ... 150
3
Value
250
370
150
4.5
50
50
260
Package
SOT23
1
Jul-27-2001
EHA07002
VPS05161
3
BAR74
Unit
V
mA
A
mW
°C
K/W
2
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BAR74E6327 Summary of contents
Page 1
Silicon Switching Diode For high-speed switching applications Type BAR74 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current Total power dissipation Junction temperature Storage temperature Thermal Resistance 1) Junction ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Breakdown voltage I = 100 µA (BR) Forward voltage I = 100 mA F Reverse current Reverse current 150 ° ...
Page 3
Forward current 300 mA 200 150 100 Forward current 25°C A BAR 74 150 F mA 100 typ ...
Page 4
Forward voltage BAR 74 1 100 0.5 0 EHB00015 100 ˚C 150 BAR74 Jul-27-2001 ...