1SS420 Semtech Corporation, 1SS420 Datasheet
1SS420
Manufacturer Part Number
1SS420
Description
Silicon Epitaxial Planar Schottky Barrier Diode
Manufacturer
Semtech Corporation
Datasheet
1.1SS420.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SS420
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
1SS420(TPL3
Manufacturer:
KEC
Quantity:
6 000
Company:
Part Number:
1SS420(TPL3,F)
Manufacturer:
SONY
Quantity:
150
Part Number:
1SS420(TPL3,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
ST 2SB772T
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (T
Characteristics at T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
DC Current Gain
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse
Base Current - DC
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
1)
at -V
at -V
at -V
at -I
at -I
at -I
at -V
at -I
at -I
at -V
at -I
PW=10ms, Duty Cycle ≤ 50%
C
C
C
E
C
C
CB
CE
CE
EB
CB
= 1 mA
= 1 mA
= 2 A, -I
= 2 A, -I
= 100 mA, -V
= 1 mA
= 30 V
= 3 V
= 2 V, -I
= 2 V, -I
= 10 V, f = 1 MHz
®
B
B
= 200 mA
= 200 mA
C
C
SEMTECH ELECTRONICS LTD.
= 20 mA
= 1 A
(Subsidiary of Sino-Tech International Holdings Limited, a company
a
CE
listed on the Hong Kong Stock Exchange, Stock Code:
= 25
Parameter
Parameter
= 5 V
1)
O
C
C
A
= 25
= 25
a
= 25
O
O
C
C
O
C)
R
Q
P
E
-V
-V
-V
Symbol
-V
-V
-I
-I
(BR)CEO
(BR)CBO
(BR)EBO
h
h
h
h
h
CE(sat)
C
724)
BE(sat)
CBO
EBO
f
Symbol
FE
FE
FE
FE
FE
T
O
-V
-V
-V
T
J
-I
-I
-I
P
P
, T
CBO
CEO
EBO
C
C
B
D
D
s
Min.
100
160
200
30
60
30
40
5
-
-
-
-
-
-
E
TO-126 Plastic Package
C
B
- 65 to + 150
Value
Typ.
0.6
1.0
40
30
10
55
80
5
3
7
-
-
-
-
-
-
-
-
-
-
-
-
Dated : 25/05/2006
Max.
120
200
320
400
0.5
1
1
2
-
-
-
-
-
-
Unit
O
W
W
V
V
V
A
A
A
C
MHz
Unit
µA
µA
pF
V
V
V
V
V
-
-
-
-
-
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