CM1800 Mitsubishi Electronics America, Inc., CM1800 Datasheet
CM1800
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CM1800 Summary of contents
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... 10. NUTS 10.65 0.2 48.8 0.2 61.5 0.3 18 screwing depth 0.2 min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM1800HC-34N I C ................................................................ V CES ....................................................... Insulated Type 1-element in a Pack AISiC Baseplate Trench Gate IGBT : CSTBT™ Soft Reverse Recovery Diode NUTS 0. 0.2 ...
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... 0 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1700 20 1800 (Note 1) 3600 1800 (Note 1) 3600 10000 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 ...
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... Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 12.5 K/kW — — ...
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... 125 3000 3600 0 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...
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... SWITCHING ENERGY CHARACTERISTICS 3000 2500 2000 1500 1000 rec 500 0 3000 3600 0 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 850V 1800A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 850V 1800A ...
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... REVERSE BIAS SAFE OPERATING AREA 5000 V T 4000 3000 2000 1000 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 850V 15V 0.9 G(on) = 125 C, Inductive load 600 1200 1800 2400 ...