STGW35NC60W ST Microelectronics, STGW35NC60W Datasheet - Page 5

• Manufacturer Part Number: STGW35NC60W
• Description: IGBTs
• Manufacturer: ST Microelectronics

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STGW35NC60W
Table 6.
Table 7.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
Symbol
(di/dt)
(di/dt)
Symbol
t
t
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C). Eon include diode recovery energy.
d
d
d(on)
d(on)
(V
(V
E
E
on
E
on
E
(
(
t
t
t
t
off
off
off
off
r
r
f
f
ts
ts
off
off
(1)
(1)
)
)
on
on
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
(see Figure 18)
V
R
T
V
R
(see Figure 16)
V
R
T
V
R
(see Figure 16)
V
R
T
(see Figure 16)
C
CC
CC
C
C
G
G
CC
CC
CC
CC
G
G
GE
GE
= 125°C
= 125 °C
= 125 °C
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 10 Ω, V
= 10 Ω, V
Test conditions
Test conditions
(see Figure 18)
GE
GE
(see Figure 16)
GE
GE
C
C
GE
GE
C
C
C
C
= 15 V,
= 15 V,
= 20 A
= 20 A
= 15 V,
= 15 V,
= 20 A
= 20 A
= 20 A,
= 20 A,
= 15 V
=15 V,
Figure
Electrical characteristics
Min.
Min.
18. If the IGBT is offered
1640
1600
Typ.
29.5
13.5
19.5
Typ.
118
151
305
181
486
455
355
810
12
29
27
46
38
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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