STGP14HF60KD ST Microelectronics, STGP14HF60KD Datasheet - Page 5

• Manufacturer Part Number: STGP14HF60KD
• Description: Short-circuit Rugged IGBT
• Manufacturer: ST Microelectronics

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STGF14HF60KD, STGP14HF60KD
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
2. Turn-off losses include also the tail of the collector current.
Symbol
(di/dt)
(di/dt)
Symbol
t
t
Eon
Eon
E
E
t
t
t
t
r
r
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
off
off
E
E
(
(
t
t
t
t
off
off
r
r
f
f
off
off
ts
ts
(2)
(2)
(1)
(1)
)
)
on
on
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
Doc ID 16118 Rev 1
V
R
(see Figure 2)
V
R
T
(see Figure 2)
V
R
(see Figure 2)
V
R
T
(see Figure 2)
V
R
(see Figure 2)
V
R
T
(see Figure 2)
j
j
j
CC
CC
CC
CC
CC
CC
G
G
GE
GE
G
G
= 150 °C
= 150 °C
= 150 °C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 10 Ω , V
= 10 Ω , V
Test conditions
Test conditions
GE
GE
GE
GE
GE
GE
C
C
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 7 A
= 7 A
= 7 A,
= 7 A,
= 7 A
= 7 A
= 15 V
= 15 V
Electrical characteristics
Min.
Min
-
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Max. Unit
Max
-
-
-
-
-
-
A/µs
A/µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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