STP3N100 ST Microelectronics, Inc., STP3N100 Datasheet - Page 2

• Manufacturer Part Number: STP3N100
• Description: Old PRODUCT: Not Suitable For Design-in
• Manufacturer: ST Microelectronics, Inc.

STP3N100/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
(BR)DSS
I
thj-case
t hc-sink
C
thj-amb
I
I
C
E
E
DS(on)
C
GS(th)
D(on)
I
I
DS S
GSS
g
T
A R
A R
oss
AS
AR
rss
iss
fs
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current
(repetitive or not-repetitive, T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current
(repetitive or not-repetitive, T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
AR
Parameter
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V
= 25 V
j
j
= Max Rating
= Max Rating x 0.8 T
=
= 10V I
> I
> I
case
= 25
DD
= 100
D(on)
D(on)
GS
< 1%)
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
o
C)
o
x R
x R
I
C)
D
D
f = 1 MHz
V
= 250 A
o
= 1.5 A
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 0
Max
Max
Typ
V
c
I
GS
D
= 125
= 1.5 A
= 0
TO-220
o
C
1.25
1000
Min.
Min.
Min.
3.5
2
1
62.5
300
Max Value
0.5
ISOWATT220
Typ.
Typ.
Typ.
750
130
1.8
3.5
80
25
6
2
3
3.12
Max.
Max.
Max.
250
950
110
5
25
40
100
4
Unit
Unit
Unit
o
o
o
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
A
S
A
A
A
A
C