IS61C25616AL Integrated Silicon Solution, Inc., IS61C25616AL Datasheet - Page 8

• Manufacturer Part Number: IS61C25616AL
• Description: 256k X 16 High-speed Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS61C25616AL
IS64C25616AL
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
8
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
t
and output loading specified in Figure 1.
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
WC
SCE
AW
HA
SA
PWB
SD
HD
HZWE
LZWE
PWE
PWE
1
2
(2)
(2)
Write Cycle Time
CE to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width (OE =High)
WE Pulse Width (OE=Low)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
IS61C25616AS
IS64C25616AS
Min.
10
—
7
7
0
0
7
7
7
6
0
3
-10
Max.
—
—
—
—
—
—
—
—
—
—
—
6
Min.
12
—
9
9
0
0
9
9
9
6
0
3
-12
(1,3)
Max.
—
—
—
—
—
—
—
—
—
—
—
6
(Over Operating Range)
Integrated Silicon Solution, Inc. — www.issi.com
Min. Max.
25
18
18
18
15
17
15
—
0
0
0
5
-25
—
—
—
—
—
—
—
—
—
—
15
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
03/21/2008
Rev. C