IS62C10248AL Integrated Silicon Solution, Inc., IS62C10248AL Datasheet - Page 4

• Manufacturer Part Number: IS62C10248AL
• Description: 1m X 8 Low Voltage, Ultra Low Power Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS62C10248AL, IS65C10248AL
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
4
Symbol
V
t
P
i
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
Symbol Parameter
V
V
V
V
i
i
Note:
1. V
out
li
lo
stg
term
t
oh
ol
ih
il
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
V
il
ih
(min) = -0.3V DC; V
(max) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
dd
+ 0.3V DC; V
il
(min) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.
(1)
ih
(max) = V
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
dd
dd
(1)
dd
= Min., i
= Min., i
+ 2.0V AC (pulse width -2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
in
out
(Over Operating Range)
≤ V
oh
ol
≤ V
dd
= 2.1 mA
= –1 mA
dd
–0.5 to +7.0
–65 to +150
Value
1.5
20
Unit
mA
°C
W
V
Com.
Com.
Auto.
Auto.
Ind.
Ind.
Min.
–0.3
2.4
2.2
–1
–2
–5
–1
–2
–5
—
V
dd
Max.
0.4
0.8
—
1
2
5
1
2
5
+ 0.5
1-800-379-4774
Rev. 00A
Unit
09/25/09
µA
µA
V
V
V
V