RD30HVF1 Mitsumi Electronics, Corp., RD30HVF1 Datasheet
RD30HVF1
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RD30HVF1 Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI RF POWER MOS FET RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W MITSUBISHI ELECTRIC 2/8 10 Jan 2006 ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 140 Ta=+25°C 120 f=1MHz 100 Vds(V) TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI RF POWER MOS FET RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 160 200 0 1 Vds VS. Ciss CHARACTERISTICS 200 Vgs=5.5V 180 Ta=+25° ...
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... Pin(dBm) Vdd-Po CHARACTERISTICS 80 Ta=25°C f=175MHz Pin=1.0W 60 Idq=0.5A Zg=ZI=50 ohm Vdd(V) TEST CIRCUIT(f=175MHz) RD30HVF1 MITSUBISHI RF POWER MOS FET RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W 50 100 Vgs-Ids CHARACTERISTICS Vds=10V 14 Tc=-25~+75° ...
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... Silicon MOSFET Power Transistor,175MHz,30W Vgg Vdd C1 9.1kOHM L1 100OHM L2 10pF 175MHz L1 RD30HVF1 100pF 8pF 12 100pF 43pF 5pF 50pF 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm MITSUBISHI ELECTRIC 5/8 RD30HVF1 C3 C2 RF-OUT 56pF 8 4.8 10.8 90 100 10 Jan 2006 ...
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... Zin f=146MHz Zin Zin , Zout f (MHz) (ohm) 135 0.71-j7.67 146 0.94-j6.46 175 0.53-j5.34 RD30HVF1 MITSUBISHI RF POWER MOS FET Silicon MOSFET Power Transistor,175MHz,30W f=146MHz Zout f=135MHz Zin Zin Zout (ohm) 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W MITSUBISHI ELECTRIC 6/8 RD30HVF1 Zo=10: Conditions 10 Jan 2006 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. S11 [MHz] (mag) (ang) 100 0.867 -172.4 150 0.879 -176.3 175 0.885 -177.5 200 0.888 -179.1 250 0.905 178.5 300 0.915 176.2 350 0.926 174.1 400 0.933 171 ...
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... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD30HVF1 MITSUBISHI RF POWER MOS FET RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W MITSUBISHI ELECTRIC 8/8 10 Jan 2006 ...