OM6001ST International Rectifier Corp., OM6001ST Datasheet - Page 3

• Manufacturer Part Number: OM6001ST
• Description: 100v Thru 500v, Up To 14 Amp, N-channel Mosfet With Or Without Zener Gate Clamp Protection
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6103ST / OM6003ST (400V)
Parameter
BV
V
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
GSS
GSS
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
SD
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6103)
Gate-Body Leakage (OM6003)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
400
2.0
5.5
3.0
700
470
0.1
0.2
2.4
3.6
70
20
18
20
40
25
2%.
± 500 nA
± 100 nA
0.25
3.15
1.05
- 5.5
- 1.6
- 2.5
- 22
4.0
(T
1.0
2.0
C
= 25°C unless otherwise noted)
S(W )
mA
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
V
)
(W
V
I
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
C
C
C
C
J
GS
DS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
= 150 C, I
/ds = 100 A/ms
= 125° C
= 125 C
= 10 W ,V
= 25 C, I
= 25 C, I
= 0,
= V
= ± 12.8 V
= ± 20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 175 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
S
GS
D
D
D
= 250 mA
= -5.5 A, V
= -4.5 A, V
F
, V
, I
D
= 3.0 A
= 3.0 A
= 3.0 A,
= I
= 10 V
D
@ 3.0 A
GS
= 3.0 A
S
,
= 10 V
GS
G
= 0
GS
GS
GS
= 0,
D
S
= 0
= 0
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ELECTRICAL CHARACTERISTICS:
Parameter
BV
V
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
I
I
V
V
t
GSS
GSS
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
GS(th)
DS(on)
fs
SD
SD
DS(on)
DS(on)
iss
oss
rss
DSS
STATIC P/N OM6104ST / OM6004ST (500V)
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6104)
Gate-Body Leakage (OM6004)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
1
2%.
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
500
2.0
4.5
2.5
3.25 4.00
700
430
0.1
0.2
2.9
2.8
90
30
18
20
42
25
± 500 nA
± 100 nA
0.25
- 4.5
- 1.4
(T
- 18
4.0
1.0
1.6
3.3
- 2
C
= 25°C unless otherwise noted)
S(W )
mA
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
)
A
A
V
V
(W
V
I
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
T
dl
D
C
C
C
C
J
GS
DS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
= 150 C, I
/ds = 100 A/ms
= 125° C
= 125 C
= 7.5 W , V
= 25 C, I
= 25 C, I
= 0,
= V
= ± 12.8 V
= ± 20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 225 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
S
D
D
D
= 250 mA
= -4.5 A, V
= -4 A, V
F
, V
, I
GS
D
= 2.5 A
= 2.5 A
= 2.5 A,
= I
D
@ 2.5 A
GS
= 10 V
= 2.5 A
S
G
,
= 10 V
GS
= 0
GS
GS
GS
D
S
= 0
= 0,
= 0