VBUS053BZ-HNH Vishay, VBUS053BZ-HNH Datasheet - Page 2

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VBUS053BZ-HNH

Manufacturer Part Number
VBUS053BZ-HNH
Description
Usb-otg Bus-port Esd-protection For Vbus = 12 V
Manufacturer
Vishay
Datasheet
VBUS053BZ-HNH
Vishay Semiconductors
Electrical Characteristics
Ratings at - 40 °C to 85 °C, ambient temperature unless otherwise specified
VBUS053BZ-HNH
All inputs (pin 1, 2, and 3) to ground (pin 9)
V
www.vishay.com
2
BUS
Protection paths
Reverse working voltage
Reverse current
Forward voltage
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Line capacitance
Line symmetry
Line to line capacitance
Protection paths
Reverse working voltage
Reverse current
Forward voltage
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Line capacitance
(pin 4) to ground (pin 9)
Parameter
Parameter
at I
at I
at I
at I
any other I/O pin at V
For technical support, please contact:
Number of line which can be protected
Number of line which can be protected
PP
PP
PP
PP
Difference of the line capacitance
at V
at I
at I
= 1 A; acc. IEC 61000-4-5; T = 25 °C
= 3 A; acc. IEC 61000-4-5; T = 25 °C
= 1 A; acc. IEC 61000-4-5; T = 25 °C
= 8 A; acc. IEC 61000-4-5; T = 25 °C
F
F
R
Test conditions/remarks
Test conditions/remarks
Among pins 1, 2 and 3
at V
at V
at V
= 3 A; acc. IEC 61000-4-5
= 8 A; acc. IEC 61000-4-5
at V
= V
Test pin at V
R
at I
R
RWM
R
at I
at I
at I
R
at I
at I
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= V
= V
R
R
F
F
R
R
= 100 nA
= 0.1 µA
= 3.3 V; T = 65 °C
= 15 mA
= 10 mA
RWM
= 1 mA
RWM
= 1 mA
R
R
= 3.3 V, f = 1 MHz
= 5.5 V
= 12 V
= 0 V;
ESDprotection@vishay.com
Symbol
Symbol
N lines
N lines
V
V
V
dC
C
V
RWM
V
V
C
RWM
V
V
C
V
V
V
V
I
I
I
BR
DD
BR
R
R
R
F
C
C
F
D
F
C
C
F
D
D
Min.
Min.
5.5
0.7
6.5
0.6
12
15
0.35
0.75
17.5
Typ.
Typ.
3.4
0.7
10
15
25
70
Document Number 81140
0.085
Max.
Max.
100
1.2
4.1
0.1
0.5
0.9
2.2
10
12
18
18
20
30
85
Rev. 1.0, 22-Jul-09
3
1
1
1
lines
Unit
Unit
line
µA
µA
pF
pF
pF
nA
pF
V
V
V
V
V
V
V
V
V
V
V
V

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