TPD4104K TOSHIBA Semiconductor CORPORATION, TPD4104K Datasheet - Page 11

• Manufacturer Part Number: TPD4104K
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Safe Operating Area
Note 1: The above safe operating areas are Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature
Note 2: The above safe operating areas include the over current protection operation area.
(1)
(2)
(3)
2.0
0
exceeds thsese, the safe operation areas reduce.
0
Over current protection
Under voltage protection
Thermal shutdown
This product incorporates the over current protection circuit to protect itself against over current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the IS pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a dead time , preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
This product incorporates the thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD reaches 150°C, all IGBT outputs shut down regardless of the input. This
protection function has hysteresis (ΔTSD = 50°C typ.). When the chip temperature falls to TSD −
ΔTSD, the chip is automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
This product incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the
V
automatically restored and the IGBT is turned on again by the input.
When the V
When the V
turned on again by the input signal.
CC
Power supply voltage V
UVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is
Figure 1 SOA at Tj = 135°C
CC
BS
BS
UVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
supply voltage drops (V
power supply falls to this product internal setting (V
BB
(V)
CC
voltage or the V
400
BS
UVD = 9 V typ.), the high-side IGBT output shuts down.
11
BS
2.1
voltage drops.
0
0
Power supply voltage V
Figure 2 SOA at Tc = 95°C
CC
R
UVD = 11 V typ.), all IGBT
= 0.5 V (typ.), the IGBT
BB
TPD4104K
(V)
2005-01-27
400