TPD4104AK TOSHIBA Semiconductor CORPORATION, TPD4104AK Datasheet - Page 8

• Manufacturer Part Number: TPD4104AK
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
Input current
Output saturation voltage
FRD forward voltage
Regulator voltage
BSD forward voltage
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output on delay time
Output off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under voltage protection
under voltage protection recovery
under voltage protection
under voltage protection recovery
Characteristics
(Ta = 25°C)
V
I
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
F
CC
CC
DIAGsat
V
ΔTSD
BS
BS
tdead
CEsat
CEsat
V
TSD
V
V
V
I
V
I
V
REG
(BSD)
t
t
I
CC
I
BB
t
on
off
CC
IH
F
BB
IL
F
UVD
UVR
rr
IH
UVD
UVR
IL
H
L
H
L
V
V
V
V
V
V
V
V
V
V
IF = 1 A, high side
IF = 1 A, low side
V
IF = 500μＡ
V
V
I
V
V
V
V
DIAG
BB
CC
BS
BS
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= “H”
= “L”
= 5Ｖ
= 0 V
= 400 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, IC = 1 A
= 280 V, IC = 1 A
= 280 V, IC = 1 A
= 280 V, IC = 1 A
= 15 V
= 15 V, IC = 1 A
= 15 V, IC = 1 A
= 15 V, I
= 15 V
= 15 V
=5mA
8
Test Condition
O
= 30 mA
⎯
⎯
⎯
⎯
⎯
⎯
13.5
10.5
135
Min
3.5
6.5
8.5
1.4
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
Typ.
11.5
280
300
270
150
200
2.4
2.4
1.6
1.6
0.9
9.5
1.5
1.2
15
⎯
⎯
⎯
⎯
50
11
⎯
⎯
0
1
7
9
TPD4104AK
2005-01-31
Max
16.5
12.5
10.5
400
410
370
150
100
180
0.5
1.5
2.0
2.0
7.5
1.2
9.5
0.5
12
⎯
⎯
⎯
⎯
5
3
3
3
3
Unit
mA
μA
μA
℃
℃
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V