DN3135 Supertex, Inc., DN3135 Datasheet

DN3135

Manufacturer Part Number

DN3135

Description

N-channel Depletion-mode Vertical Dmos Fets

Manufacturer

Supertex, Inc.

Datasheet

1.DN3135.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

DN3135K1-G

Manufacturer:

MICROCHIP/微芯

Quantity:

20 000

Company:

H&T Electronics

Part Number:

DN3135N8-G

Quantity:

347

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Notes:

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

Soldering temperature*

350V

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Normally-on switches

Solid state relays

Converters

Linear ampliﬁ ers

Constant current sources

Power supply circuits

Telecom

DSX

DGX

Same as SOT-23,

(max)

35Ω

DS(ON)

Same as SOT-89.

N-Channel Depletion-Mode Vertical DMOS FETs

180mA

(min)

DSS

-55

DN3135K1-G

TO-236AB

DN3135K1

C to +150

Package Options

300

Value

±20V

DGX

DSX

General Description

The Supertex DN3135 is a low threshold depletion-mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁ cient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Pin Conﬁ gurations

DN3135N8-G

TO-243AA

DN3135N8

TO-236AB

(Top View)

where

Product marking for TO-243AA:

Product marking for TO-236AB:

= 2-week alpha date code

DN1S

N1S

TO-243AA

(top view)

DN3135

Related parts for DN3135

DN3135 Summary of contents

Page 1

... All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. General Description The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device ...

Page 2

... I = 100mA DS D 120 V = -5.0V 25V 1MHz 25V 150mA 25Ω, 15 GEN -10V -5.0V -5.0V PULSE GENERATOR R GEN INPUT DN3135 1 I DRM 300mA 300mA = 0V = -5. 150mA = 150mA OUTPUT D.U.T. ...

Page 3

... Side View 3 0.0512 ± 0.004 (1.3004 ± 0.1016) 2 Measurement Legend = 0.0207 ± 0.003 (0.5257 ± 0.0762) 0.0035 ± 0.0025 (0.0889 ± 0.0635) 0.0043 ± 0.0009 (0.1092 ± 0.0229) 3 DN3135 Dimensions in Inches (Dimensions in Millimeters) 0.0197 NOM (0.50) End View ...

Page 4

... BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3135 A012307 1.50 ± 0.10 0.40 ± 0.05 2.21 ± 0.08 0.5 ± 0.06 Side View Notes: All dimensions are in millimeters ...

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