DIM800DDM17-A000 Dynex Semiconductor, DIM800DDM17-A000 Datasheet - Page 2

• Manufacturer Part Number: DIM800DDM17-A000
• Description: Dual Switch Igbt Module
• Manufacturer: Dynex Semiconductor

DIM800DDM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
2/10
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
= 25˚C unless stated otherwise
V
V
I
P
V
Q
C(PK)
I
I
CES
GES
max
2
isol
C
PD
t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage - per module
Partial discharge - per module
2
t value
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V
= 75˚C
= 25˚C, T
case
p
= 10ms, T
= 110˚C
1
= 1800V, V
j
= 150˚C
vj
= 125˚C
Test Conditions
2
= 1300V, 50Hz RMS
-
www.dynexsemi.com
Max.
1700
1600
6940
4000
800
120
10
20
Units
kA
PC
W
V
V
A
A
V
2
s