SS9011 Fairchild Semiconductor, SS9011 Datasheet
SS9011
Manufacturer Part Number
SS9011
Description
Ss9011 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS9011.pdf
(4 pages)
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©2002 Fairchild Semiconductor Corporation
AM Converter, AM/FM IF Amplifier
General Purpose Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
C
f
NF
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(on)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
28 ~ 45
D
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
39 ~ 60
E
SS9011
I
I
I
V
V
V
I
V
V
f = 1MHz
V
V
f=1MHz, R
C
C
E
C
CB
EB
CE
CE
CB
CE
CE
= 100 A, I
=1mA, I
= 100 A, I
= 10mA, I
= 5V, I
Test Condition
= 50V, I
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 5V, I
54 ~ 80
B
S
C
C
C
C
C
F
=0
E
B
E
= 500
=0
E
C
= 1mA
= 1mA
= 1mA
= 1.0 mA
=0
= 1mA
= 0
=0
=0
72 ~ 108
G
1. Emitter 2. Base 3. Collector
1
Min.
0.65
150
50
30
28
5
-55 ~ 150
Ratings
400
150
50
30
30
5
97 ~ 146
Typ.
0.08
370
0.7
1.5
2.0
90
H
TO-92
Max.
0.75
100
100
198
0.3
4.0
Rev. A4, November 2002
132 ~ 198
Units
mW
mA
V
V
V
C
C
I
Units
MHz
nA
nA
pF
dB
V
V
V
V
V
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SS9011 Summary of contents
Page 1
... Base-Emitter on Voltage BE C Output Capacitance ob f Current Gain Bandwidth Product T NF Noise Figure h Classification FE Classification ©2002 Fairchild Semiconductor Corporation SS9011 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = 100 =1mA ...
Page 2
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 V BE 100 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1000 100 10 I =100 = 0 100 1000 (sat) 100 (sat) I =10I C ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A4, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...