4MN10CH Sanyo Semiconductor Corporation, 4MN10CH Datasheet

4MN10CH

Manufacturer Part Number

4MN10CH

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.4MN10CH.pdf (3 pages)

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Ordering number : ENA0268

4MN10CH

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : GL

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwideth Product

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Output Capacitance

Reverse Transfer Capacitance

•

High f T : f T =400MHz (typ).

High breakdown voltage : V CEO 200V.

Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=1.4pF.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)CBO

V (BR)CEO

V (BR)EBO

V CE (sat)

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

h FE 1

h FE 2

Tstg

Cob

I CP

Cre

P C

NPN Epitaxial Planar Silicon Transistor

High-Frequency General-Purpose

Amplifier Applications

I C

f T

V CB =150V, I E =0A

V EB =2V, I C =0A

V CE =10V, I C =10mA

V CE =10V, I C =60mA

V CE =30V, I C =30mA

I C =30mA, I B =3mA

I C =10 A, I E =0A

I C =1mA, R BE =

I E =100 A, I C =0A

V CB =30V, f=1MHz

Mounted on a ceramic board (600mm

4MN10CH

Conditions

0.8mm)

D2005AA MS IM TB-00001940

min

200

Ratings

typ

Ratings

400

1.8

1.4

--55 to +150

max

200

100

200

600

150

200

0.1

1.0

0.6

No. A0268-1/3

MHz

Unit

Related parts for 4MN10CH

4MN10CH Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 4MN10CH NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier Applications Symbol ...

Page 2

... Collector-to-Emitter Voltage 100 1.0 10 Collector Current 4MN10CH 120 100 IT10191 1000 V CE =10V 100 100 1.0 IT10193 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. 4MN10CH 2 f= 1MHz 10 7 ...

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