3MN03S Sanyo Semiconductor Corporation, 3MN03S Datasheet
3MN03S
Manufacturer Part Number
3MN03S
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.3MN03S.pdf
(3 pages)
Ordering number : EN8392A
3MN03S
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : WA
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Voltage Gain
•
•
Ultrasmall-sized package enabiling compactness and slimness of sets.
High f T and small Cre (f T=320MHz typ, Cre=0.95pF typ ).
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cre
PG
P C
NF
I C
Tj
f T
SANYO Semiconductors
V CB =10V, I E =0A
V EB =4V, I C =0A
V CE =6V, I C =1mA
V CE =6V, I C =1mA
V CE =6V, f=1MHz
V CE =6V, I C =1mA, f=100MHz
V CE =6V, I C =1mA, f=100MHz
Mounted on a ceramic board (600mm
72606 / 32406 MS IM TB-00002141 / 71505AA MS IM TB-00001531
3MN03S
Conditions
Conditions
2
0.8mm)
DATA SHEET
min
200
0.7
60
Ratings
typ
Ratings
0.95
320
3.0
23
--55 to +150
max
150
150
200
30
20
30
0.1
0.1
1.3
5
No.8392-1/3
MHz
Unit
mW
Unit
mA
dB
dB
pF
V
V
V
C
C
A
A
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3MN03S Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 3MN03S SANYO Semiconductors NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose ...
Page 2
... Collector-to-Emitter Voltage 1000 100 0.1 1.0 Collector Current 3MN03S 100 ITR05148 =6V 1000 100 ITR05150 ...
Page 3
... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. 3MN03S 1.0 f=1MHz 7 5 ...