NE97733-T1 California Eastern Laboratories, NE97733-T1 Datasheet - Page 2

• Manufacturer Part Number: NE97733-T1
• Description: Pnp Silicon High Frequency Transistor
• Manufacturer: California Eastern Laboratories

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
V
V
V
T
CBO
CEO
T
EBO
I
STG
C
J
200
400
300
100
10
0
8
6
4
2
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
0
-1
DC POWER DERATING CURVES
NE97733
GAIN BANDWIDTH PRODUCT vs.
Ambient Temperature, T
PARAMETERS
Collector Current, I
COLLECTOR CURRENT
50
100
-10
C
(mA)
A
FREE AIR
150
V
UNITS
(°C)
CE
mA
°C
°C
V
V
V
= -8 V
1
-100
200
(T
-65 to +200
RATINGS
A
(T
= 25°C)
150
-20
-12
-50
-3
A
= 25°C)
-10
100
-15
20
35
30
25
15
10
40
10
-5
50
30
20
0
15
10
5
5
4
3
2
1
-0.1
0
5
0.1
-1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT
Collector Current, I
0.2
INSERTION GAIN vs.
INSERTION GAIN vs.
Collector Current, I
-1.0
Frequency, f (GHz)
FREQUENCY
0.3 0.4 0.5
-10
-10
C
1.0
C
(mA)
-100
(mA)
I
V
C
V
f = 1 GHz
CE
V
= -20 mA
CE
CE
= -8 V
2.0
= -8 V
= -8V
-1000
3.0
100